LX5535

www.DataSheet4U.com TM ® LX5535 InGaP HBT 2.4 – 2.5 GHz Power Amplifier PRODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LX5535 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 5V, it provides 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 120mA. The output power for EVM(Error Vector Magnitude) of 3.5% is 25dBm (64QAM/54Mbps), where the PA consumes 260mA total DC current. The LX5535 is available in a 16-pin 3mm x 3mm micro-lead package (MLPQ-16L). The compact footprint, low profile, and thermal capability of the MLP package makes the LX5535 an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g and WiMAX applications. ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Quiescent Current 120mA Power Gain 32 dB Power for EVM~3.5 % 54Mbps/64QAM : 25dBm Total Current 260mA for Pout=25dBm, 802.11g 802.11b mask-compliant power : 28dBm Total Current 370mA for Pout=+28dBm, 802.11b 2 Small Footprint: 3x3mm Low Profile: 0.9mm WWW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS ƒ IEEE 802.11b/g ƒ IEEE 802.16 WiMAX...