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BLF6G10LS-135R Datasheet, Equivalent, LDMOS transistor.

Power LDMOS transistor

Power LDMOS transistor

 

 

 

Part BLF6G10LS-135R
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-135R Powe r LDMOS transistor Rev.
01 — 17 Novem ber 2008 Product data sheet 1.
Product profile 1.
1 General description 135 W LDMOS power transistor for base statio n applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical perfo rmance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W- CDMA [1] f (MHz) 869 to 894 VDS (V) 2 8 PL(AV) (W) 26.
5 Gp (dB) 21.
0 ηD ( %) 28.
0 ACPR (dBc) −39[1] Test sign al: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF pe r carrier; carrier spa .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-135R Datasheet
Part BLF6G10LS-135R
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-135R Powe r LDMOS transistor Rev.
01 — 17 Novem ber 2008 Product data sheet 1.
Product profile 1.
1 General description 135 W LDMOS power transistor for base statio n applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical perfo rmance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W- CDMA [1] f (MHz) 869 to 894 VDS (V) 2 8 PL(AV) (W) 26.
5 Gp (dB) 21.
0 ηD ( %) 28.
0 ACPR (dBc) −39[1] Test sign al: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF pe r carrier; carrier spa .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-135R Datasheet

BLF6G10LS-135R

BLF6G10LS-135R
BLF6G10LS-135R

BLF6G10LS-135R

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