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BLF6G10LS-200R Datasheet, Equivalent, LDMOS transistor.

Power LDMOS transistor

Power LDMOS transistor

 

 

 

Part BLF6G10LS-200R
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-200R Powe r LDMOS transistor Rev.
01 — 21 Janua ry 2008 Preliminary data sheet 1.
Prod uct profile 1.
1 General description 20 0 W LDMOS power transistor for base sta tion applications at frequencies from 8 00 MHz to 1000 MHz.
Table 1.
Typical pe rformance Typical RF performance at Tca se = 25 °C in a class-AB production te st circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V ) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (% ) 27.
5 ACPR (dBc) −40[1] Test signa l: 3GPP; test model 1; 64 DPCH; PAR = 7 .
5 dB at 0.
01 % probability on CCDF per carrier; carrier spac .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-200R Datasheet
Part BLF6G10LS-200R
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-200R Powe r LDMOS transistor Rev.
01 — 21 Janua ry 2008 Preliminary data sheet 1.
Prod uct profile 1.
1 General description 20 0 W LDMOS power transistor for base sta tion applications at frequencies from 8 00 MHz to 1000 MHz.
Table 1.
Typical pe rformance Typical RF performance at Tca se = 25 °C in a class-AB production te st circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V ) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (% ) 27.
5 ACPR (dBc) −40[1] Test signa l: 3GPP; test model 1; 64 DPCH; PAR = 7 .
5 dB at 0.
01 % probability on CCDF per carrier; carrier spac .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-200R Datasheet

BLF6G10LS-200R

BLF6G10LS-200R
BLF6G10LS-200R

BLF6G10LS-200R

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