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BLF6G10LS-200R Datasheet, Equivalent, LDMOS transistor.Power LDMOS transistor Power LDMOS transistor |
| Part | BLF6G10LS-200R |
|---|---|
| Description | Power LDMOS transistor |
| Feature | www. DataSheet4U. com BLF6G10LS-200R Powe r LDMOS transistor Rev. 01 — 21 Janua ry 2008 Preliminary data sheet 1. Prod uct profile 1. 1 General description 20 0 W LDMOS power transistor for base sta tion applications at frequencies from 8 00 MHz to 1000 MHz. Table 1. Typical pe rformance Typical RF performance at Tca se = 25 °C in a class-AB production te st circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V ) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (% ) 27. 5 ACPR (dBc) −40[1] Test signa l: 3GPP; test model 1; 64 DPCH; PAR = 7 . 5 dB at 0. 01 % probability on CCDF per carrier; carrier spac . |
| Manufacture | NXP Semiconductors |
| Datasheet |
| Part | BLF6G10LS-200R |
|---|---|
| Description | Power LDMOS transistor |
| Feature | www. DataSheet4U. com BLF6G10LS-200R Powe r LDMOS transistor Rev. 01 — 21 Janua ry 2008 Preliminary data sheet 1. Prod uct profile 1. 1 General description 20 0 W LDMOS power transistor for base sta tion applications at frequencies from 8 00 MHz to 1000 MHz. Table 1. Typical pe rformance Typical RF performance at Tca se = 25 °C in a class-AB production te st circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V ) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (% ) 27. 5 ACPR (dBc) −40[1] Test signa l: 3GPP; test model 1; 64 DPCH; PAR = 7 . 5 dB at 0. 01 % probability on CCDF per carrier; carrier spac . |
| Manufacture | NXP Semiconductors |
| Datasheet |
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