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BLF6G10-45 Datasheet, Equivalent, LDMOS Transistor.

Power LDMOS Transistor

Power LDMOS Transistor

 

 

 

Part BLF6G10-45
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G10-45 Power LD MOS transistor Rev.
01 — 3 February 2 009 Product data sheet 1.
Product pro le 1.
1 General description 45 W LDMOS power transistor for base station appl ications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W- CDMA [1] f (MHz) 920 to 960 VDS (V) 2 8 PL(AV) (W) 1.
0 Gp (dB) 22.
5 ηD (% ) 7.
8 ACPR (dBc) −48.
5[1] Test sign al: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF pe r carrier; carrier spa .
Manufacture NXP
Datasheet
Download BLF6G10-45 Datasheet
Part BLF6G10-45
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G10-45 Power LD MOS transistor Rev.
01 — 3 February 2 009 Product data sheet 1.
Product pro le 1.
1 General description 45 W LDMOS power transistor for base station appl ications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W- CDMA [1] f (MHz) 920 to 960 VDS (V) 2 8 PL(AV) (W) 1.
0 Gp (dB) 22.
5 ηD (% ) 7.
8 ACPR (dBc) −48.
5[1] Test sign al: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF pe r carrier; carrier spa .
Manufacture NXP
Datasheet
Download BLF6G10-45 Datasheet

BLF6G10-45

BLF6G10-45
BLF6G10-45

BLF6G10-45

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