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BLF6G10S-45 Datasheet, Equivalent, LDMOS Transistor.Power LDMOS Transistor Power LDMOS Transistor |
| Part | BLF6G10S-45 |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G10S-45 Power L DMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product pr ofile 1. 1 General description 45 W LDM OS power transistor for base station ap plications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performan ce RF performance at Tcase = 25 °C in a common source class-AB production tes t circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1. 0 Gp (dB) 23 ηD (% ) 8 ACPR (dBc) −48. 5[1] Test signal : 3GPP; test model 1; 64 DPCH; PAR = 7. 5 dB at 0. 01 % probability on CCDF per carrier; carrier spaci . |
| Manufacture | NXP |
| Datasheet |
| Part | BLF6G10S-45 |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G10S-45 Power L DMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product pr ofile 1. 1 General description 45 W LDM OS power transistor for base station ap plications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performan ce RF performance at Tcase = 25 °C in a common source class-AB production tes t circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1. 0 Gp (dB) 23 ηD (% ) 8 ACPR (dBc) −48. 5[1] Test signal : 3GPP; test model 1; 64 DPCH; PAR = 7. 5 dB at 0. 01 % probability on CCDF per carrier; carrier spaci . |
| Manufacture | NXP |
| Datasheet |
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