www.DataSheet4U.com
BLF6G10S-45
Power LDMOS transistor
Rev. 02 — 10 February 2009 Product data sheet
1. Product profile...
www.DataSheet4U.com
BLF6G10S-45
Power LDMOS
transistor
Rev. 02 — 10 February 2009 Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 920 to 960
VDS (V) 28
PL(AV) (W) 1.0
Gp (dB) 23
ηD (%) 8
ACPR (dBc) −48.5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efficiency = 8 % N ACPR = −48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
www.DataSheet4U.com
NXP Semiconductors
BLF6G10S-45
Power LDMOS
transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning informat...