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BLF6G10S-45 Datasheet, Equivalent, LDMOS Transistor.

Power LDMOS Transistor

Power LDMOS Transistor

 

 

 

Part BLF6G10S-45
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G10S-45 Power L DMOS transistor Rev.
02 — 10 February 2009 Product data sheet 1.
Product pr ofile 1.
1 General description 45 W LDM OS power transistor for base station ap plications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performan ce RF performance at Tcase = 25 °C in a common source class-AB production tes t circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.
0 Gp (dB) 23 ηD (% ) 8 ACPR (dBc) −48.
5[1] Test signal : 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spaci .
Manufacture NXP
Datasheet
Download BLF6G10S-45 Datasheet
Part BLF6G10S-45
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G10S-45 Power L DMOS transistor Rev.
02 — 10 February 2009 Product data sheet 1.
Product pr ofile 1.
1 General description 45 W LDM OS power transistor for base station ap plications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performan ce RF performance at Tcase = 25 °C in a common source class-AB production tes t circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.
0 Gp (dB) 23 ηD (% ) 8 ACPR (dBc) −48.
5[1] Test signal : 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spaci .
Manufacture NXP
Datasheet
Download BLF6G10S-45 Datasheet

BLF6G10S-45

BLF6G10S-45
BLF6G10S-45

BLF6G10S-45

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