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BLF6G22-180RN Datasheet, Equivalent, LDMOS Transistor.

Power LDMOS Transistor

Power LDMOS Transistor

 

 

 

Part BLF6G22-180RN
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G22-180RN; BLF6 G22LS-180RN Power LDMOS transistor Rev.
01 — 20 November 2008 Product data s heet 1.
Product profile 1.
1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit.
Mode of opera tion 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.
0 ηD (%) 25 IMD3 (dBc) −3 8[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0.
01 % probability .
Manufacture NXP
Datasheet
Download BLF6G22-180RN Datasheet
Part BLF6G22-180RN
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G22-180RN; BLF6 G22LS-180RN Power LDMOS transistor Rev.
01 — 20 November 2008 Product data s heet 1.
Product profile 1.
1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit.
Mode of opera tion 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.
0 ηD (%) 25 IMD3 (dBc) −3 8[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0.
01 % probability .
Manufacture NXP
Datasheet
Download BLF6G22-180RN Datasheet

BLF6G22-180RN

BLF6G22-180RN
BLF6G22-180RN

BLF6G22-180RN

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