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BLF6G22-180RN Dataheets PDF



Part Number BLF6G22-180RN
Manufacturers NXP
Logo NXP
Description Power LDMOS Transistor
Datasheet BLF6G22-180RN DatasheetBLF6G22-180RN Datasheet (PDF)

www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.0 ηD (%) 25 IMD3 (dBc) −3.

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