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BLF6G22LS-180RN Datasheet, Equivalent, LDMOS Transistor.Power LDMOS Transistor Power LDMOS Transistor |
| Part | BLF6G22LS-180RN |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G22-180RN; BLF6 G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data s heet 1. Product profile 1. 1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit. Mode of opera tion 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16. 0 ηD (%) 25 IMD3 (dBc) −3 8[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0. 01 % probability . |
| Manufacture | NXP |
| Datasheet |
| Part | BLF6G22LS-180RN |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G22-180RN; BLF6 G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data s heet 1. Product profile 1. 1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit. Mode of opera tion 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16. 0 ηD (%) 25 IMD3 (dBc) −3 8[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 d B at 0. 01 % probability . |
| Manufacture | NXP |
| Datasheet |
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