MRFE6S9060NR1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.1 dB Drain Efficiency — 33% ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 63% Features Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 24...