MRFE6S9125NBR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. N - CDMA Application Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.8% rms GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (920 - 960 MHz) Power Gain — 19 dB Drain Efficiency — 62% Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for...