POWER MOSFET. 2SK3294 Datasheet

2SK3294 MOSFET. Datasheet pdf. Equivalent

Part 2SK3294
Description SWITCHING N-CHANNEL POWER MOSFET
Feature DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS F.
Manufacture NEC
Datasheet
Download 2SK3294 Datasheet




2SK3294
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3294
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3294 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 160 mMAX. (VGS = 10 V, ID = 10 A)
Low input capacitance
Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3294
2SK3294-S
2SK3294-ZJ
TO-220AB
TO-262
TO-263(MP-25ZJ)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
250
Gate to Source Voltage (VDS = 0 V) VGSS
±30
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±20
±60
Total Power Dissipation (TC = 25°C) PT1
100
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
55 to +150
20
150
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14061EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP (K)
Printed in Japan
©
1999,2001



2SK3294
2SK3294
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 250 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 10 A
VGS = 10 V, ID = 10 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 125 V , ID = 10 A
VGS = 10 V
RG = 10
VDD = 200 V
VGS = 10 V
ID = 20 A
IF = 20 A, VGS = 0 V
IF = 20 A, VGS = 0 V
di/dt = 50 A/µs
MIN.
2.5
6.0
TYP.
MAX.
100
±10
4.5
120
1500
360
220
24
78
110
60
57
8
36
1.0
340
2.1
160
Unit
µA
µA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 V 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL VGS
VGS
Wave Form
10%
0
VGS 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14061EJ1V0DS







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)