POWER MOSFET. 2SK3295 Datasheet

2SK3295 MOSFET. Datasheet pdf. Equivalent

Part 2SK3295
Description SWITCHING N-CHANNEL POWER MOSFET
Feature DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3295 SWITCHING N-CHANNEL POWER MOS F.
Manufacture NEC
Datasheet
Download 2SK3295 Datasheet




2SK3295
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3295
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3295 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 18 mMAX. (VGS = 10 V, ID = 18 A)
Low gate charge
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3295
TO-220AB
2SK3295-S
TO-262
2SK3295-ZK
TO-263(MP-25ZK)
2SK3295-ZJ
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
20
±20
±35
±140
1.5
35
150
55 to +150
Note PW 10 µs, Duty Cycle 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14064EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1999, 2000



2SK3295
www.DataESLheEeCt4TUR.cIoCmAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 18 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 10 V , ID = 18 A
VGS(on) = 10 V
RG = 10
VDD = 16 V
VGS = 10 V
ID = 35 A
IF = 35 A, VGS = 0 V
IF = 35 A, VGS = 0 V
di/dt = 100 A/µs
2SK3295
MIN.
1.0
7.5
TYP.
13
21
720
370
180
85
2000
65
270
16
3.1
5.2
1.0
28
14
MAX.
10
±10
2.5
18
27
UNIT
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL VGS
VGS
Wave Form
10%
0
VGS(on) 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14064EJ2V0DS







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)