2SK3297

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3297 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3297 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3297 PACKAGE Isolated TO-220 FEATURES Low gate charge QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) Gate voltage rating ±30 V Low on-state resistance RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, I D = 2.5 V) Avalanche capability ratings Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current(DC) (TC = 25°C) Drain Current(pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±5.0 ±20 2.0 35 150 −55 to +150 5.0 16.7 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional inform...