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Power FET. EIC0910-2 Datasheet

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Power FET. EIC0910-2 Datasheet
















EIC0910-2 FET. Datasheet pdf. Equivalent













Part

EIC0910-2

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-2 UPDATED 0 8/21/2007 9.50-10.50GHz 2-Watt Interna lly-Matched Power FET FEATURES • • • • • • • 9.50 –10.50GHz B andwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1 dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTR.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-2 Datasheet


Excelics Semiconductor EIC0910-2

EIC0910-2; ICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP R TH PARAMETERS/TEST CONDITIONS1 Output P ower at 1dB Compression f = 9.50-10.50G Hz VDS = 10 V, IDSQ ≈ 550mA Gain at 1 dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550m A Power Added Efficiency at 1dB Compres sion f = 9.50-10.50GHz VDS .


Excelics Semiconductor EIC0910-2

= 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 9.50-10.50GHz Outpu t 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDS S f = 10.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sens itive device. MIN 32.5 7.0 TYP 33.5 8.0 ±0.6 30 600 -43 -46 100.


Excelics Semiconductor EIC0910-2

0 -2.5 11 1250 -4.0 12 o MAX UNITS dBm dB dB % 700 mA dBc mA V C/W VDS = 3 V, IDS = 10 mA Note: 1. Tested with 1 00 Ohm gate resistor. 2. S.C.L. = Singl e Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RA TING FOR EFE SYMBOLS PARAMETERS ABSOLUT E1 15V -5V 24mA -4.8mA 33.0dBm 175C -65 C to +175C 12.5W CONTINUOUS2 10V -4V 7. 2mA -1.2mA @ 3dB C.





Part

EIC0910-2

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-2 UPDATED 0 8/21/2007 9.50-10.50GHz 2-Watt Interna lly-Matched Power FET FEATURES • • • • • • • 9.50 –10.50GHz B andwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1 dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTR.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-2 Datasheet




 EIC0910-2
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-2
9.50-10.50GHz 2-Watt Internally-Matched Power FET
FEATURES
9.50 –10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at Po = 22.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 9.50-10.50GHz
VDS = 10 V, IDSQ 550mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 550mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 550mA
f = 9.50-10.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 10.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
32.5
7.0
-43
TYP
33.5
8.0
30
600
-46
1000
-2.5
11
MAX
±0.6
700
UNITS
dBm
dB
dB
%
mA
dBc
1250
-4.0
12
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
24mA
Igr Reverse Gate Current
-4.8mA
Pin Input Power 33.0dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175C
-65C to +175C
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




 EIC0910-2
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-2
9.50-10.50GHz 2-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 550mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
11GHz
3.0
4.0
5.0
10.0
20
10
0
-10
S21 and S12
DB(|S[2,1]|) *
EIC0910-2
DB(|S[1,2]|) *
EIC0910-2
-0.2
-0.4
S[1,1] *
EIC0910-2
S[2,2] *
EIC0910-2
0.2
0.4
Swp Min
9GHz
-20
-30
9
9.5 10 10.5
Frequency (GHz)
11
FREQ
(GHz)
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
10.75
11.00
11.25
--- S11 ---
MAG
ANG
0.801 -144.750
0.748 -164.560
0.650
171.690
0.522
141.280
0.364
101.620
0.229
42.070
0.227
-31.690
0.309
-80.620
0.369 -111.080
0.399 -134.340
0.402 -154.030
--- S21 ---
MAG
ANG
1.666
55.890
1.962
36.560
2.305
14.740
2.669
-10.520
2.943
-38.640
3.009
-67.750
2.929
-95.780
2.712 -122.110
2.470 -146.280
2.254 -168.390
2.085
170.040
--- S12 ---
MAG
ANG
0.045
10.590
0.059
-9.970
0.076
-32.680
0.098
-58.510
0.117
-86.820
0.130 -115.840
0.134 -143.460
0.132 -168.960
0.126
168.060
0.123
146.710
0.117
126.180
--- S22 ---
MAG
ANG
0.698
-25.380
0.658
-39.760
0.600
-57.400
0.516
-79.320
0.405 -107.410
0.288 -144.010
0.223
167.180
0.232
122.730
0.276
93.950
0.329
75.830
0.377
62.360
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007




 EIC0910-2
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-2
9.50-10.50GHz 2-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
14
THIRD-ORDER
INTERCEPT POINT IP3
12
10
Potentially Unsafe
Operating Region
8
6
Safe Operating
Region
4
f1 or f2
IM3
IP3 = Pout + IM3/2
Pout
IM3
Pin
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
2 (2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 550 mA)
37.00
P-1dB & G-1dB vs Frequency
10.00
36.00
9.00
35.00
8.00
34.00
7.00
33.00
6.00
32.00
P-1dB (dBm)
G-1dB (dB)
5.00
9.4 9.6 9.8 10.0 10.2 10.4 10.6
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 9.50 GHz, f2 = 9.51 GHz
-15
-20
-25
-30
-35
-40
-45
-50
-55 IM3 (dBc)
-60
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007




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