EIC0910-2

www.DataSheet4U.com EIC0910-2 UPDATED 08/21/2007 9.50-10.50GHz 2-Watt Internally-Matched Power FET FEATURES 9.50 –10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 9.50-10.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 10.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 32.5 7.0 TYP 33.5 8.0 ±0.6 30 600 -43 -46 1000 -2.5 11 1250 -4.0 12 o MAX UNITS dBm dB dB % 700 mA dBc mA V C/W VDS = 3 V, IDS = 10 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 24mA -4.8mA 33.0dBm 175C -65C to +175C 12.5W CONTINUOUS2 10V -4V 7.2mA -1.2mA @ 3dB Compression 175C -65C...