EIC0910-5

www.DataSheet4U.com EIC0910-5 ISSUED DATE: 04-19-04 9.50-10.50GHz, 5W Internally Matched Power FET 9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN HERMETIC METAL FLANGE PACKAGE SN Excelics EIC0910-5 YM ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC0910-5 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain Flatness f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA Power Added Efficiency at 1dB compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion f=10.5GHz ∆f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L Ids @ 65% Idss Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=30mA MIN 36.5 6 TYP 37.5 7 ±0.6 30 1700 1900 MAX UNIT dBm dB dB % mA dBc -43 -46 2900 -2.5 5.0 3500 -4 5.5 o P1dB G1dB ∆G PAE Id1dB IM3 Idss Vp Rth mA V C/W Thermal Resistance (Au-Sn Eutectic Attach) ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.5V Idss 60mA @ 3dB Compression 150 oC -65 to +150 oC 23W Note: 1. Exceeding any of the above ratings may result in permanent...