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Power FET. EIC0910-5 Datasheet

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Power FET. EIC0910-5 Datasheet
















EIC0910-5 FET. Datasheet pdf. Equivalent













Part

EIC0910-5

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-5 ISSUED DA TE: 04-19-04 9.50-10.50GHz, 5W Interna lly Matched Power FET • • • • 9.50-10.50 GHz BANDWIDTH AND INPUT/O UTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GA IN HERMETIC METAL FLANGE PACKAGE SN E xcelics EIC0910-5 YM ELECTRICAL CHAR ACTERISTICS (Ta = 25 OC) EIC.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-5 Datasheet


Excelics Semiconductor EIC0910-5

EIC0910-5; 0910-5 SYMBOLS PARAMETERS/TEST CONDITION S Output Power at 1dB Compression f=9.5 -10.5GHz, Vds=10V, Idsq=1600mA Gain at 1dB Compression f=9.5-10.5GHz, Vds=10V, Idsq=1600mA Gain Flatness f = 9.5-10.5 GHz, Vds = 10 V, Idsq = 1600mA Power Ad ded Efficiency at 1dB compression f=9.5 -10.5GHz, Vds=10V, Idsq=1600mA Drain Cu rrent at 1dB Compression Output 3rd Ord er Intermodulation.


Excelics Semiconductor EIC0910-5

Distortion f=10.5GHz ∆f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L Ids @ 65% Ids s Saturated Drain Current Pinch-off Vol tage Vds=3V, Vgs=0V Vds=3V, Ids=30mA MI N 36.5 6 TYP 37.5 7 ±0.6 30 1700 1900 MAX UNIT dBm dB dB % mA dBc -43 -46 290 0 -2.5 5.0 3500 -4 5.5 o P1dB G1dB ∆ G PAE Id1dB IM3 Idss Vp Rth mA V C/W Thermal Resistance (Au-Sn Eutectic Atta ch) ABSOLUTE MAXIMUM R.


Excelics Semiconductor EIC0910-5

ATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate -Source Voltage Drain Current Forward G ate Current Input Power Channel Tempera ture Storage Temperature Total Power Di ssipation CONTINUOUS1,2 10V -4.5V Idss 60mA @ 3dB Compression 150 oC -65 to +1 50 oC 23W Note: 1. Exceeding any of th e above ratings may.





Part

EIC0910-5

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-5 ISSUED DA TE: 04-19-04 9.50-10.50GHz, 5W Interna lly Matched Power FET • • • • 9.50-10.50 GHz BANDWIDTH AND INPUT/O UTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE: 30% TYPICAL +37.5 dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GA IN HERMETIC METAL FLANGE PACKAGE SN E xcelics EIC0910-5 YM ELECTRICAL CHAR ACTERISTICS (Ta = 25 OC) EIC.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-5 Datasheet




 EIC0910-5
www.DataSheet4U.com
9.50-10.50GHz,
5W Internally Matched Power FET
9.50-10.50 GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE: 30% TYPICAL
+37.5 dBm TYPICAL P1dB OUTPUT POWER
7dB TYPICAL G1dB POWER GAIN
HERMETIC METAL FLANGE PACKAGE
EIC0910-5
ISSUED DATE: 04-19-04
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Gain at 1dB Compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Gain Flatness
f = 9.5-10.5GHz, Vds = 10 V, Idsq = 1600mA
Power Added Efficiency at 1dB compression
f=9.5-10.5GHz, Vds=10V, Idsq=1600mA
Id1dB
IM3
Drain Current at 1dB Compression
Output 3rd Order Intermodulation Distortion f=10.5GHz
f=10MHz 2-Tone Test. Pout=26.5 dBm S.C.L
Ids @ 65% Idss
Idss Saturated Drain Current Vds=3V, Vgs=0V
Vp Pinch-off Voltage Vds=3V, Ids=30mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN
36.5
6
-43
EIC0910-5
TYP
37.5
7
30
1700
-46
2900
-2.5
5.0
MAX
±0.6
1900
3500
-4
5.5
UNIT
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
CONTINUOUS1,2
Vds Drain-Source Voltage
10V
Vgs Gate-Source Voltage
-4.5V
Ids Drain Current
Idss
Igsf Forward Gate Current
60mA
Pin
Input Power
@ 3dB Compression
Tch Channel Temperature
150 oC
Tstg Storage Temperature
-65 to +150 oC
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
23W
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com












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