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EIC0910-8 Dataheets PDF



Part Number EIC0910-8
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC0910-8 DatasheetEIC0910-8 Datasheet (PDF)

www.DataSheet4U.com EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Comp.

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www.DataSheet4U.com EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 9.5-10.5GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f =10.5GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage VDS = 3 V, IDS = 40 mA 3 Thermal Resistance Caution! ESD sensitive device. MIN 38.5 6.5 TYP 39.5 7.5 ±0.6 30 2200 -40 -43 3700 -2.5 2.5 4300 -4.0 3.5 2600 MAX UNITS dBm dB dB % mA dBc mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96mA -19.2mA 39dBm 175C -65C to +175C 43W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175C -65C to +175C 43W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 www.DataSheet4U.com EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 2200mA S11 and S22 0. Swp Max 11GHz 2. 0 1.0 0.8 20 S21 and S12 -1.0 -0.8 -0 6 .6 -3 .0 -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .4 -0 .6 -0 -2 .0 S[2,2] * EIC0910-8 -0.8 0. 4 -1.0 FREQ (GHz) 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50 10.75 11.00 11.25 --- S11 --MAG 0.762 0.698 0.608 0.501 0.335 0.171 0.166 0.292 0.399 0.441 0.419 ANG 39.140 18.780 -2.610 -26.030 -56.330 -106.570 156.130 103.200 73.790 49.230 28.540 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 .0 S[1,1] * EIC0910-8 Swp Min 9GHz -4 .0 -5. 0 2 -0. -10.0 2 -0. -5. 0 5.0 S21 and S12 (dB) -4 .0 0.2 .4 -0 -2 .0 0. 4 3. 0 10 0 4. 0 10.0 DB(|S[2,1]|) * EIC0910-8 DB(|S[1,2]|) * EIC0910-8 -10 10.0 3. 0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 0 4. 5.0 10.0 2. 0 0.2 -20 -30 9 9.5 10 Frequency (GHz) 10.5 11 0. 6 0.8 1.0 --- S21 --MAG 2.089 2.205 2.339 2.511 2.652 2.711 2.679 2.561 2.414 2.258 2.158 ANG -121.460 -147.410 -174.210 158.700 129.330 98.910 68.110 38.070 9.130 -19.300 -47.480 --- S12 --MAG 0.075 0.082 0.094 0.106 0.116 0.124 0.123 0.122 0.117 0.113 0.113 ANG -169.770 165.740 139.390 113.610 84.600 54.940 24.260 -5.080 -33.680 -61.740 -91.500 --- S22 --MAG 0.429 0.444 0.464 0.484 0.465 0.411 0.339 0.268 0.235 0.274 0.360 ANG 137.700 103.800 72.840 42.960 13.820 -15.940 -48.490 -86.620 -130.070 -168.690 162.890 page 2 of 4 Revised October 2007 www.DataSheet4U.com EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 45 40 35 Total Power Dissipation (W) 30 25 20 15 10 (2f2 - f1) or (2f1 - f2) IP3 = Pout + IM3/2 THIRD-ORDER INTERCEPT POINT IP3 Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region f1 or f2 Pout Pin IM3 Safe Operating Region IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 5 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) 40 39 P-1dB (dBm) Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) 12 11 P-1dB & G-1dB vs Frequency IM3 vs Output Power -15 -20 -25 f1 = 10.00 GHz, f2 = 10.01 GHz 38 37 36 35 9.4 9.6 P-1dB (dBm) G-1dB (dB) 10 9 8 7 10.6 IM3 (dBc) G-1dB (dB) -30 -35 -40 -45 -50 -55 -60 23 24 25 26 27 28 29 30 31 32 33 34 35 IM3 (dBc) 9.8 10.0 Frequency (GHz) 10.2 10.4 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised Octobe.


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