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Power FET. EIC0910A-8 Datasheet

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Power FET. EIC0910A-8 Datasheet
















EIC0910A-8 FET. Datasheet pdf. Equivalent













Part

EIC0910A-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910A-8 ISSUED D ATE: 10/09/2007 9.20-10.00 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • • 9.20-10 .0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Pow er at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Eff iciency -46 dBc IM3 at PO = 28dBm SCL H ermetic Metal Flange Package 100% .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910A-8 Datasheet


Excelics Semiconductor EIC0910A-8

EIC0910A-8; Tested for DC, RF, and RTH ELECTRICAL C HARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PA RAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Co mpression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 9.20- 10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Pow er Added Efficiency at 1dB .


Excelics Semiconductor EIC0910A-8

Compression f = 9.20-10.0GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB C ompression f = 9.20-10.0GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28dBm S.C .L VDS = 10 V, IDSQ ≈ 65% IDSS f = 10 .0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.5 6.5 TY P 39.0 7.5 MAX UNITS d.


Excelics Semiconductor EIC0910A-8

Bm dB ±0.6 30 2300 -43 -46 4000 -2.5 3 .5 5000 -4.0 4.0 o dB % 2600 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1. Tested with 10 0 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RAT ING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tc h Tstg Pt PARAMETERS Drain-Source Volta ge Gate-Source Volt.





Part

EIC0910A-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910A-8 ISSUED D ATE: 10/09/2007 9.20-10.00 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • • 9.20-10 .0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Pow er at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Eff iciency -46 dBc IM3 at PO = 28dBm SCL H ermetic Metal Flange Package 100% .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910A-8 Datasheet




 EIC0910A-8
www.DataSheet4U.com
ISSUED DATE: 10/09/2007
EIC0910A-8
9.20-10.00 GHz 8-Watt Internally Matched Power FET
FEATURES
9.20-10.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 9.20-10.0GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 9.20-10.0GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 9.20-10.0GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 9.20-10.0GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 9.20-10.0GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 10.0GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-43
TYP
39.0
7.5
30
2300
-46
4000
-2.5
3.5
MAX
±0.6
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
96mA
Igsr
Reserve Gate Current
-19.2mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38.5dBm
175 oC
-65 to +175 oC
Pt
Total Power Dissipation
38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007




 EIC0910A-8
www.DataSheet4U.com
ISSUED DATE: 10/09/2007
EIC0910A-8
9.20-10.00 GHz 8-Watt Internally Matched Power FET
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC0910A-8 (Hermetic)
EIC0910A-8NH (Non-Hermetic)
.827±.010 .669
Excelics
EIC0910A-8
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
Excelics
EIC0910A-8NH
YYWW
SN
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
EIC0910A-8
Hermetic
EIC0910A-8NH Non-Hermetic
Grade1
Industrial
Industrial
fTest (GHz)
9.20-10.00GHz
9.20-10.00GHz
P1dB (min)
38.5
38.5
IM3 (min)2
-43
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised October 2007








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