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Power FET. EIC1010-8 Datasheet

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Power FET. EIC1010-8 Datasheet
















EIC1010-8 FET. Datasheet pdf. Equivalent













Part

EIC1010-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC1010-8 UPDATED 0 2/15/2005 10.00-10.70 GHz 8-Watt Inter nally Matched Power FET Excelics EIC101 0-8 FEATURES • • • • • • • 10.00– 10.70GHz Bandwidth Inpu t/Output Impedance Matched to 50 Ohms + 39.5 dBm Output Power at 1dB Compressio n 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC1010-8 Datasheet


Excelics Semiconductor EIC1010-8

EIC1010-8; Flange Package 100% Tested for DC, RF, a nd RTH YM SN ELECTRICAL CHARACTERIST ICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 38.5 6.0 TYP 39. 5 7.0 ±0.6 31 2300 -43 -46 4000 -2.5 3 .5 3) Overall Rth depends on case mount ing. PARAMETERS/TEST CONDITIONS1 Outpu t Power at 1dB Compression f = 10.00-10 .70GHz VDS = 10 V, IDS.


Excelics Semiconductor EIC1010-8

Q ≈ 2200mA Gain at 1dB Compression f = 10.00-10.70GHz VDS = 10 V, IDSQ ≈ 22 00mA Gain Flatness f = 10.00-10.70GHz V DS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 10.00 -10.70GHz VDS = 10 V, IDSQ ≈ 2200mA D rain Current at 1dB Compression f = 10. 00-10.70GHz Output 3rd Order Intermodul ation Distortion ∆f = 10 MHz 2-Tone T est; Pout = 28.5 dBm S.C.L2 .


Excelics Semiconductor EIC1010-8

VDS = 10 V, IDSQ ≈ 65% IDSS f = 10.70 GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Res istance 3 MAX UNITS dBm dB dB % 2600 mA dBc 5000 -4.0 4.0 o mA V C/W VD S = 3 V, IDS = 40 mA 2) S.C.L. = Single Carrier Level. 1) Tested with 100 Ohm gate resistor. ABSOLUTE MAXIMUM RATIN G1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: 1. 2. .





Part

EIC1010-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC1010-8 UPDATED 0 2/15/2005 10.00-10.70 GHz 8-Watt Inter nally Matched Power FET Excelics EIC101 0-8 FEATURES • • • • • • • 10.00– 10.70GHz Bandwidth Inpu t/Output Impedance Matched to 50 Ohms + 39.5 dBm Output Power at 1dB Compressio n 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC1010-8 Datasheet




 EIC1010-8
www.DataSheet4U.com
UPDATED 02/15/2005
EIC1010-8
10.00-10.70 GHz 8-Watt Internally Matched Power FET
FEATURES
10.00– 10.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
31% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
Excelics
EIC1010-8
YM
SN
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 10.00-10.70GHz
38.5
6.0
39.5
7.0
31
Id1dB Drain Current at 1dB Compression f = 10.00-10.70GHz
2300
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 10.70 GHz
-43 -46
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
4000
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
-2.5
3.5
1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
MAX
±0.6
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
38 W
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
Notes:
1.
2.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised February 2005












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