Internally Matched Power FET
www.DataSheet4U.com
EIC1010A-12
ISSUED: 07/24/2007
10.0-10.25 GHz 12-Watt Internally Matched Power FET
Excelics
FEATU...
Description
www.DataSheet4U.com
EIC1010A-12
ISSUED: 07/24/2007
10.0-10.25 GHz 12-Watt Internally Matched Power FET
Excelics
FEATURES
10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package
EIC1010A-12
.827±.010 .669
.120 MIN
.024 .421
YYWW
SN
.120 MIN
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 10.0-10.25GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 9 V, IDSQ ≈ 65% IDSS f = 10.25GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
Caution! ESD sensitive device. MIN
39.5 6.0
TYP
40.5 7.0
MAX
UNITS
dBm dB
±0.5 30 3300 -40 -43 5800 -2.5 2.3 7200 -4.0 2.6
o
dB %
3700
mA dBc mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA
2) S.C.L. = Single Carrier Level.
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS PARAMETERS Drain...
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