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Power FET. EIC1010A-12 Datasheet

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Power FET. EIC1010A-12 Datasheet
















EIC1010A-12 FET. Datasheet pdf. Equivalent













Part

EIC1010A-12

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Int ernally Matched Power FET Excelics FEA TURES • • • • • • 10.0-10.2 5GHz Bandwidth Input/Output Impedance M atched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain a t 1dB Compression 30% Power Added Effic iency Hermetic Metal Flange Package EI C1010A-12 .827±.010 .669 .120 .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC1010A-12 Datasheet


Excelics Semiconductor EIC1010A-12

EIC1010A-12; MIN .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIO NS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25° C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10 .0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.0-10.25G Hz VDS = 9 V, IDSQ ≈ 3200m.


Excelics Semiconductor EIC1010A-12

A Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Power Added Effici ency at 1dB Compression f = 10.0-10.25G Hz VDS = 9 V, IDSQ ≈ 3200mA Drain Cur rent at 1dB Compression f = 10.0-10.25G Hz Output 3rd Order Intermodulation Dis tortion ∆f=10MHz 2-Tone Test. Pout=28 .5 dBm S.C.L Vds = 9 V, IDSQ ≈ 65% ID SS f = 10.25GHz Saturated Drain Current Pinch-off Voltage Thermal.


Excelics Semiconductor EIC1010A-12

Resistance 3 Caution! ESD sensitive de vice. MIN 39.5 6.0 TYP 40.5 7.0 MAX UNITS dBm dB ±0.5 30 3300 -40 -43 580 0 -2.5 2.3 7200 -4.0 2.6 o dB % 3700 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA 2) S.C.L. = Sing le Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAX IMUM RATING1,2 SYMB.





Part

EIC1010A-12

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Int ernally Matched Power FET Excelics FEA TURES • • • • • • 10.0-10.2 5GHz Bandwidth Input/Output Impedance M atched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain a t 1dB Compression 30% Power Added Effic iency Hermetic Metal Flange Package EI C1010A-12 .827±.010 .669 .120 .
Manufacture

Excelics Semiconductor

Datasheet
Download EIC1010A-12 Datasheet




 EIC1010A-12
www.DataSheet4U.com
ISSUED: 07/24/2007
EIC1010A-12
10.0-10.25 GHz 12-Watt Internally Matched Power FET
FEATURES
10.0-10.25GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Hermetic Metal Flange Package
.827±.010 .669
Excelics
EIC1010A-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ 3200mA
Gain at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ 3200mA
Gain Flatness
f = 10.0-10.25GHz
VDS = 9 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 9 V, IDSQ 3200mA
f = 10.0-10.25GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 10.0-10.25GHz
Output 3rd Order Intermodulation Distortion
f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 9 V, IDSQ 65% IDSS
f = 10.25GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 58 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
39.5
6.0
TYP
40.5
7.0
30
3300
MAX
±0.5
3700
UNITS
dBm
dB
dB
%
mA
-40 -43
dBc
5800
7200
mA
-2.5 -4.0
V
2.3 2.6 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
130mA
-21mA
40.0dBm
175 oC
-65 to +175 oC
57W
CONTINUOUS2
10V
-4V
43mA
-7mA
@ 3dB Compression
175 oC
-65 to +175 oC
57W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007




 EIC1010A-12
www.DataSheet4U.com
ISSUED: 07/24/2007
EIC1010A-12
10.0-10.25 GHz 12-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2007








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