EIC1011-12

www.DataSheet4U.com EIC1011-12 UPDATED 07/25/2007 10.7-11.7 GHz 12-Watt Internally Matched Power FET FEATURES 10.7–11.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 10.7-11.7GHz -43 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 11.7GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA MIN 39.5 5.0 TYP 40.5 6.0 MAX UNITS dBm dB ±0.6 27 3300 -46 5800 -2.5 2.3 7200 -4.0 2.6 o dB % 3700 mA dBc mA V C/W Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSO...