EIC1011-4

www.DataSheet4U.com EIC1011-4 UPDATED 08/21/2007 10.70-11.70GHz 4-Watt Internally-Matched Power FET FEATURES 10.70 –11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 10.7-11.7GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 11.70GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.0 6.5 ±0.6 30 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o MAX UNITS dBm dB dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 35.5dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C ...