EIC1212-4

www.DataSheet4U.com EIC1212-4 ISSUED DATE: 09/20//2007 12.20-12.70 GHz 4-Watt Internally Matched Power FET FEATURES 12.20-12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 6.5dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 12.70GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.5 6.5 MAX UNITS dBm dB ±0.6 28 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel T...