Document
www.DataSheet4U.com
EIC1213-4
UPDATED 08/21/2007
12.70-13.20GHz 4-Watt Internally-Matched Power FET
FEATURES
• • • • • • • 12.70 –13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 12.7-13.2GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance
3
Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.0 6.5 ±0.6 28 1100 -42 1280 -44 2080 -2.5 5.5 2880 -4.0 6.0
o
MAX
UNITS dBm dB dB %
1300
mA dBc mA V C/W
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 35.5dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W
Vds Vgs Igf Igr Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised October 2007
www.DataSheet4U.com
EIC1213-4
UPDATED 08/21/2007
12.70-13.20GHz 4-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1100mA
S11 and S22
6 0.
Swp Max 14GHz
2. 0
1.0
20
0.8
S21 and S12
-1.0
-0.8
-0 .6
-3 .0
-10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
0. 4
-0 .6
-0.8
-1.0
S[2,2] * EIC1213-4
1.0
-2
S[1,1] * EIC1213-4
6 0.
0.8
.0
Swp Min 12GHz
FREQ (GHz) 12.0 12.2 12.4 12.6 12.8 13.0 13.2 13.4 13.6 13.8 14.0
--- S11 --MAG 0.6013 0.5629 0.5404 0.4871 0.4055 0.3196 0.2249 0.118 0.0879 0.1766 0.2745 ANG 49.54 32.76 14.98 -2.5 -19.9 -39.9 -63.97 -101.47 170.88 117.33 92.92
1.8523 1.9838 2.1132 2.234 2.3293 2.4047 2.4359 2.4042 2.322 2.1849 2.0299
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-5. 0
-4 .0
-3
.0
0 3.
0 4.
5.0
-0.
2
-10.0
2 -0.
5.0
S21 and S12 (dB)
-4 .0 -5. 0
.4 -0
.0 -2
0. 4
0 3.
10
0 4.
0.2
10.0
0
DB(|S[2,1]|) * EIC1213-4 DB(|S[1,2]|) * EIC1213-4
10.0
-10
10.0
5.0
4.0
2. 0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0.2
MAG
0
-20
-30 12 12.5 13 Frequency (GHz) 13.5 14
--- S21 --ANG -73.04 -88.24 -104.28 -121.18 -138.38 -156.51 -175.14 166.07 147.76 129.28 112.36
--- S12 --MAG 0.0813 0.0911 0.1011 0.1114 0.1196 0.1284 0.1342 0.1355 0.1342 0.1288 0.1226 ANG -101.01 -116.63 -132.11 -148.78 -166.24 176.28 158.11 139.57 121.8 104.29 87.32
--- S22 --MAG 0.602 0.5402 0.4471 0.3645 0.2874 0.2125 0.179 0.2111 0.2843 0.3574 0.4104 ANG -98.17 -109.62 -123.24 -140.48 -163.34 163.54 117.02 71.43 38.35 16.48 0.75
page 2 of 4 Revised October 2007
www.DataSheet4U.com
EIC1213-4
UPDATED 08/21/2007
12.70-13.20GHz 4-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER INTERCEPT POINT IP3
25 Total Power Dissipation (W) Potentially Unsafe Operating Region
IP3 = Pout + IM3/2 f1 or f2
20
Pout [S.C.L.] (dBm)
15 Safe Operating Region
Pout Pin IM3
10
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
5
(2f2 - f1) or (2f1 - f2)
0 0 25 50 75 100 125 Case Temperature (°C) 150 175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
38 37
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
9 8
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65
f1 = 13.20 GHz, f2 = 13.21 GHz
P-1dB (dBm)
G-1dB (dB)
36 35 34 P-1dB (dBm) 33 12.6 12.7 12.8 12.9 13.0 13.1 G-1dB (dB) 13.2
7 6 5 4 13.3
IM3 (dBc)
IM3 (dBc) 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33
Frequency (GHz)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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