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EIC1213-4 Dataheets PDF



Part Number EIC1213-4
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC1213-4 DatasheetEIC1213-4 Datasheet (PDF)

www.DataSheet4U.com EIC1213-4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 12.70 –13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB C.

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www.DataSheet4U.com EIC1213-4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 12.70 –13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 12.7-13.2GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.0 6.5 ±0.6 28 1100 -42 1280 -44 2080 -2.5 5.5 2880 -4.0 6.0 o MAX UNITS dBm dB dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 35.5dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 www.DataSheet4U.com EIC1213-4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1100mA S11 and S22 6 0. Swp Max 14GHz 2. 0 1.0 20 0.8 S21 and S12 -1.0 -0.8 -0 .6 -3 .0 -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .4 -0 0. 4 -0 .6 -0.8 -1.0 S[2,2] * EIC1213-4 1.0 -2 S[1,1] * EIC1213-4 6 0. 0.8 .0 Swp Min 12GHz FREQ (GHz) 12.0 12.2 12.4 12.6 12.8 13.0 13.2 13.4 13.6 13.8 14.0 --- S11 --MAG 0.6013 0.5629 0.5404 0.4871 0.4055 0.3196 0.2249 0.118 0.0879 0.1766 0.2745 ANG 49.54 32.76 14.98 -2.5 -19.9 -39.9 -63.97 -101.47 170.88 117.33 92.92 1.8523 1.9838 2.1132 2.234 2.3293 2.4047 2.4359 2.4042 2.322 2.1849 2.0299 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -5. 0 -4 .0 -3 .0 0 3. 0 4. 5.0 -0. 2 -10.0 2 -0. 5.0 S21 and S12 (dB) -4 .0 -5. 0 .4 -0 .0 -2 0. 4 0 3. 10 0 4. 0.2 10.0 0 DB(|S[2,1]|) * EIC1213-4 DB(|S[1,2]|) * EIC1213-4 10.0 -10 10.0 5.0 4.0 2. 0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0.2 MAG 0 -20 -30 12 12.5 13 Frequency (GHz) 13.5 14 --- S21 --ANG -73.04 -88.24 -104.28 -121.18 -138.38 -156.51 -175.14 166.07 147.76 129.28 112.36 --- S12 --MAG 0.0813 0.0911 0.1011 0.1114 0.1196 0.1284 0.1342 0.1355 0.1342 0.1288 0.1226 ANG -101.01 -116.63 -132.11 -148.78 -166.24 176.28 158.11 139.57 121.8 104.29 87.32 --- S22 --MAG 0.602 0.5402 0.4471 0.3645 0.2874 0.2125 0.179 0.2111 0.2843 0.3574 0.4104 ANG -98.17 -109.62 -123.24 -140.48 -163.34 163.54 117.02 71.43 38.35 16.48 0.75 page 2 of 4 Revised October 2007 www.DataSheet4U.com EIC1213-4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 30 THIRD-ORDER INTERCEPT POINT IP3 25 Total Power Dissipation (W) Potentially Unsafe Operating Region IP3 = Pout + IM3/2 f1 or f2 20 Pout [S.C.L.] (dBm) 15 Safe Operating Region Pout Pin IM3 10 IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 5 (2f2 - f1) or (2f1 - f2) 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 1100 mA) 38 37 Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) 9 8 P-1dB & G-1dB vs Frequency IM3 vs Output Power -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 f1 = 13.20 GHz, f2 = 13.21 GHz P-1dB (dBm) G-1dB (dB) 36 35 34 P-1dB (dBm) 33 12.6 12.7 12.8 12.9 13.0 13.1 G-1dB (dB) 13.2 7 6 5 4 13.3 IM3 (dBc) IM3 (dBc) 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Frequency (GHz) Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com pa.


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