EIC1415-2

www.DataSheet4U.com EIC1415-2 UPDATED 08/20/2007 14.40-15.35GHz 2-Watt Internally-Matched Power FET FEATURES 14.40 –15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -42 dBc IM3 at Po = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.35GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 32.5 5.0 TYP 33.5 6.0 ±0.6 25 600 -38 -42 1040 -2.5 11 1440 -4.0 12 o MAX UNITS dBm dB dB % 700 mA dBc mA V C/W VDS = 3 V, IDS = 10 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 24mA -4.8mA 33.0dBm 175C -65C to +175C 12.5W CONTINUOUS2 10V -4V 7.2mA -1.2mA @ 3dB Compression 17...