EIC1415A-4

www.DataSheet4U.com EIC1415A-4 ISSUED 08/21/2007 14.40-15.40GHz 4-Watt Internally Matched Power FET Excelics EIC1415A-4 GATE DRAIN FEATURES 14.40– 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43 dBc IM3 at Po = 25.0 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .060 MIN. .650±.008 .512 .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 14.40-15.40GHz Drain Current at 1dB Compression f = 14.40-15.40GHz Caution! ESD sensitive device. MIN 35.5 4.5 TYP 36.0 5.0 MAX UNITS dBm dB ±0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0 o dB % 1400 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.40GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall...