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EIC2832-2
UPDATED 02/14/2006
2.80-3.20 GHz 2-Watt Internally Matched Power FET
Excelics
EIC2832-2
.827±.010 .669
.120 MIN
FEATURES
• • • • • • • • 2.80– 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024 .421
YYWW
SN
.120 MIN
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH
Output Power at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 2.80-3.20GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
Caution! ESD sensitive device. MIN
32.5 11.0
TYP
33.5 12.0
MAX
UNITS
dBm dB
±0.6 35 600 -43 -46 1000 -2.5 11 1250 -4.0 12
o
dB %
700
mA dBc mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA
2) S.C.L. = Single Carrier Level.
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 21.6mA -3.6mA 32.5dBm 175 C -65 to +175 oC 12.5W
o
CONTINUOUS2 10V -4V 7.2mA -1.2mA @ 3dB Compression 175 oC -65 to +175 oC 12.5W
Vds Vgs Igsf Igsr Pin Tch Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1 Revised February 2006
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