EIC3439-4

www.DataSheet4U.com EIC3439-4 ISSUED DATED: 11/12/2007 3.40-3.90GHz 4-Watt Internally Matched Power FET FEATURES 3.40–3.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 3.40-3.90GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.90GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 11.0 TYP 36.5 12.0 MAX UNITS dBm dB ±0.6 35 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1500 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperat...