Document
www.DataSheet4U.com
EIC4450-4
UPDATED 08/21/2007
4.40-5.00 GHz 4-Watt Internally Matched Power FET
FEATURES
• • • • • • • 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH
Caution! ESD sensitive device. MIN
35.5 10.5
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 4.40-5.00GHz Drain Current at 1dB Compression f = 4.40-5.00GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
TYP
36.5 11.5
MAX
UNITS
dBm dB
±0.6 37 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0
o
dB %
1500
mA dBc mA V C/W
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised October 2007
www.DataSheet4U.com
EIC4450-4
UPDATED 08/21/2007
4.40-5.00 GHz 4-Watt Internally Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1100mA
S11 and S22
2. 0
S[1,1] * EIC4450-4 S[2,2] * -3 .0 EIC4450-4
-4 .0 -5. 0
0. 4
6 0.
Swp Max 5.5GHz
0.8
20
1.0
S21 and S12
-1.0
-0.8
-0 .6
S21 and S12 (dB)
-10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0
.4
0.
4
.0 -2
-0 .6
Swp Min 4GHz
-0.8
-1.0
FREQ (GHz)
--- S11 --MAG ANG
4.00 4.25 4.50 4.75 5.00 5.25 5.50 5.75 6.00 6.25 6.50
0.808 0.713 0.570 0.383 0.301 0.481 0.671 0.795 0.869 0.909 0.933
-68.190 -110.590 -163.190 129.460 28.000 -56.790 -110.260 -149.080 -179.020 156.420 135.760
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-5. 0
-4 .0
-3 .0
0 3.
0 4.
5.0
-0.
2
-10.0
2 -0.
-0
.4
.0 -2
0 3.
10
0 4.
5.0
0
10.0
DB(|S[2,1]|) * EIC4450-4 DB(|S[1,2]|) * EIC4450-4
0.2
10.0
-10
10.0
5.0
4.0
2. 0
3.0
2.0
1.0 1.0
0.8
0.6
0.8
0.4
6 0.
0.2
0.2
0
-20
-30 4 4.5 Frequency (GHz) 5 5.5
--- S21 --MAG ANG
--- S12 --MAG ANG
--- S22 --MAG ANG
3.508 4.141 4.620 4.719 4.375 3.625 2.699 1.929 1.365 0.965 0.681
99.990 59.190 13.810 -34.020 -83.660 -132.810 -177.940 141.910 106.080 72.960 42.570
0.055 0.074 0.090 0.102 0.100 0.090 0.071 0.053 0.040 0.028 0.020
37.090 -2.750 -49.090 -96.850 -145.990 165.590 122.650 84.390 51.160 27.210 0.750
0.424 0.368 0.382 0.429 0.431 0.364 0.268 0.240 0.290 0.380 0.488
-52.880 -108.070 -171.490 132.270 82.100 33.460 -19.720 -76.080 -122.110 -155.490 178.060
page 2 of 4 Revised October 2007
www.DataSheet4U.com
EIC4450-4
UPDATED 08/21/2007
4.40-5.00 GHz 4-Watt Internally Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER INTERCEPT POINT IP3
25 Total Power Dissipation (W)
Pout [S.C.L.] (dBm)
20
Potentially Unsafe Operating Region
IP3 = Pout + IM3/2 f1 or f2
Pout Pin IM3
15 Safe Operating Region
10
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
5
(2f2 - f1) or (2f1 - f2)
0 0 25 50 75 100 125 Case Temperature (°C) 150 175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
39 38 37
P-1dB (dBm)
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
20 19 18 16 15 14 13 12 11 17
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
-15 -20 -25
f1 = 4.70 GHz, f2 = 4.69 GHz
35 34 33 32 31 30 4.3 4.4 4.5
IM3 (dBc)
G-1dB (dB)
36 P-1dB (dBm) G-1dB (dB)
-30 -35 -40 -45 -50 -55 -60 22 23 24 25 26 27 28 29 30 31 32 33 IM3 (dBc)
4.6
4.7
4.8
4.9
5.0
5.1
Frequency (GHz)
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.exceli.