DatasheetsPDF.com

EIC4450-4 Dataheets PDF



Part Number EIC4450-4
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC4450-4 DatasheetEIC4450-4 Datasheet (PDF)

www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 10.5 PARAM.

  EIC4450-4   EIC4450-4



Document
www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 10.5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 4.40-5.00GHz Drain Current at 1dB Compression f = 4.40-5.00GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 TYP 36.5 11.5 MAX UNITS dBm dB ±0.6 37 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1500 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1100mA S11 and S22 2. 0 S[1,1] * EIC4450-4 S[2,2] * -3 .0 EIC4450-4 -4 .0 -5. 0 0. 4 6 0. Swp Max 5.5GHz 0.8 20 1.0 S21 and S12 -1.0 -0.8 -0 .6 S21 and S12 (dB) -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .4 0. 4 .0 -2 -0 .6 Swp Min 4GHz -0.8 -1.0 FREQ (GHz) --- S11 --MAG ANG 4.00 4.25 4.50 4.75 5.00 5.25 5.50 5.75 6.00 6.25 6.50 0.808 0.713 0.570 0.383 0.301 0.481 0.671 0.795 0.869 0.909 0.933 -68.190 -110.590 -163.190 129.460 28.000 -56.790 -110.260 -149.080 -179.020 156.420 135.760 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -5. 0 -4 .0 -3 .0 0 3. 0 4. 5.0 -0. 2 -10.0 2 -0. -0 .4 .0 -2 0 3. 10 0 4. 5.0 0 10.0 DB(|S[2,1]|) * EIC4450-4 DB(|S[1,2]|) * EIC4450-4 0.2 10.0 -10 10.0 5.0 4.0 2. 0 3.0 2.0 1.0 1.0 0.8 0.6 0.8 0.4 6 0. 0.2 0.2 0 -20 -30 4 4.5 Frequency (GHz) 5 5.5 --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 3.508 4.141 4.620 4.719 4.375 3.625 2.699 1.929 1.365 0.965 0.681 99.990 59.190 13.810 -34.020 -83.660 -132.810 -177.940 141.910 106.080 72.960 42.570 0.055 0.074 0.090 0.102 0.100 0.090 0.071 0.053 0.040 0.028 0.020 37.090 -2.750 -49.090 -96.850 -145.990 165.590 122.650 84.390 51.160 27.210 0.750 0.424 0.368 0.382 0.429 0.431 0.364 0.268 0.240 0.290 0.380 0.488 -52.880 -108.070 -171.490 132.270 82.100 33.460 -19.720 -76.080 -122.110 -155.490 178.060 page 2 of 4 Revised October 2007 www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 30 THIRD-ORDER INTERCEPT POINT IP3 25 Total Power Dissipation (W) Pout [S.C.L.] (dBm) 20 Potentially Unsafe Operating Region IP3 = Pout + IM3/2 f1 or f2 Pout Pin IM3 15 Safe Operating Region 10 IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 5 (2f2 - f1) or (2f1 - f2) 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 1100 mA) 39 38 37 P-1dB (dBm) Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) 20 19 18 16 15 14 13 12 11 17 P-1dB & G-1dB vs Frequency IM3 vs Output Power -15 -20 -25 f1 = 4.70 GHz, f2 = 4.69 GHz 35 34 33 32 31 30 4.3 4.4 4.5 IM3 (dBc) G-1dB (dB) 36 P-1dB (dBm) G-1dB (dB) -30 -35 -40 -45 -50 -55 -60 22 23 24 25 26 27 28 29 30 31 32 33 IM3 (dBc) 4.6 4.7 4.8 4.9 5.0 5.1 Frequency (GHz) Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.exceli.


EIC4450-18 EIC4450-4 EIC4450-8


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)