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EIC5964-4

Excelics Semiconductor

Internally Matched Power FET

www.DataSheet4U.com EIC5964-4 UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET FEATURES • • • • •...


Excelics Semiconductor

EIC5964-4

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www.DataSheet4U.com EIC5964-4 UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET FEATURES 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 9.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 5.90-6.40GHz Drain Current at 1dB Compression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 TYP 36.5 10.0 MAX UNITS dBm dB ±0.6 37 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current I...




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