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EIC5964-8 Dataheets PDF



Part Number EIC5964-8
Manufacturers Excelics Semiconductor
Logo Excelics Semiconductor
Description Internally Matched Power FET
Datasheet EIC5964-8 DatasheetEIC5964-8 Datasheet (PDF)

www.DataSheet4U.com EIC5964-8 5.90-6.40 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This ampli.

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www.DataSheet4U.com EIC5964-8 5.90-6.40 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 5.90-6.40GHz Drain Current at 1dB Compression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40 GHz MIN 38.5 9 TYP 39.5 10 MAX UNITS dBm dB ±0.6 37 2200 -43 -46 4000 -2.5 3.5 4500 -4.0 4.0 o dB % 2600 mA dBc mA V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2003 www.DataSheet4U.com EIC5964-8 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 80 mA @ 3dB compression 32 W 150°C -65/+150°C 1,2 Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 2200mA S11 and S22 0. 6 Swp Max 6.6GHz 2. 0 0.8 1.0 20 S21 and S12 5. 0 S21 and S12 (dB) 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .0 -0.8 FREQ (GHz) --- S11 --MAG ANG -1.0 S[2,2] EIC5964-8 -0 .6 -2 --- S21 --MAG ANG 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 0.873 0.8439 0.7893 0.7151 0.6028 0.444 0.2308 0.2091 0.455 0.6333 0.7311 -7.73 -25.93 -46.35 -69.29 -96.47 -131.54 173.31 46.37 -18.8 -56.77 -85.42 1.9865 2.285 2.6094 2.9628 3.3734 3.7964 4.0744 4.0033 3.4617 2.6951 2.035 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 .0 S[1,1] .4 -0 EIC5964-8 -4 .0 -5 . 0 2 - 0. Swp Min 5.7GHz -1 0.0 0. 4 3. 0 10 4. 0 0 10 .0 DB(|S[2,1]|) EIC5964-8 DB(|S[1,2]|) EIC5964-8 0.2 -10 -20 -30 5.7 6 Frequency (GHz) 6.3 6.6 --- S12 --MAG ANG --- S22 --MAG ANG 102.43 77.92 51.4 23.77 -5.88 -39.07 -76.09 -116.4 -156.9 167.51 136.97 0.0385 0.0467 0.0592 0.0737 0.0912 0.1107 0.1282 0.1362 0.1237 0.1009 0.0814 50.45 23.43 -4.16 -33.07 -62.69 -96.25 -133.24 -173.52 147.8 112.66 83.64 0.4069 0.4003 0.4285 0.4765 0.5213 0.5321 0.4733 0.3603 0.2712 0.3134 0.4055 -90.78 -128.98 -166.69 158.39 125.52 90.88 49.87 -2.01 -75.07 -142.54 176.45 page 2 of 4 Revised October 2003 www.DataSheet4U.com EIC5964-8 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 36 32 Total Power Dissipation (W) 28 24 20 16 12 8 (2f2 - f1) or (2f1 - f2) IP3 = Pout + IM3/2 THIRD-ORDER INTERCEPT POINT IP3 Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region f1 or f2 Pout Pin IM3 Safe Operating Region IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 4 0 0 25 50 75 100 Case Temperature (°C) 125 150 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) 43 42 Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) 13 12 P-1dB & G-1dB vs Frequency IM3 vs Output Power -15 -20 -25 f1 = 6.40 GHz, f2 = 6.41 GHz P-1dB (dBm) G-1dB (dB) IM3 (dBc) 41 40 39 P-1dB (dBm) 38 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 G-1dB (dB) 11 10 9 8 -30 -35 -40 -45 -50 -55 -60 23 24 25 26 27 28 29 30 31 32 33 34 35 IM3 (dBc) Frequency (GHz) Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2003 www.DataSheet4U.com EIC5964-8 PACKAGE OU.


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