EIC5972-12

www.DataSheet4U.com EIC5972-12 UPDATED 11/10/2006 5.90-7.20 GHz 12-Watt Internally Matched Power FET Excelics EIC5972-12 945 .803 .079 MIN .079 MIN FEATURES 5.90– 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at Pout = 30.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 YYWW SN .315 .685 .617 .004 .168 .055 .095 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 5.90-7.20GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance o 3 Caution! ESD sensitive device. MIN 40.5 8.0 TYP 41.5 9.0 MAX UNITS dBm dB ±0.8 36 3400 -43 -46 6000 -2.5 2.5 7500 -4.0 3.0 o dB % 3800 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM ...