EIC7179-12

www.DataSheet4U.com EIC7179-12 ISSUED 02/29/2008 7.10-7.90 GHz 12-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES 7.10– 7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 38% Power Added Efficiency -47 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7179-12 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3250mA Power Added Efficiency at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 7.10-7.90GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.90GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 40.5 8.0 TYP 41.5 9.0 MAX UNITS dBm dB ±0.6 38 3500 -45 -47 6500 -2.5 2.3 7900 -4.0 2.8 o dB % 4150 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 62 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting....