EIC7785-10

www.DataSheet4U.com EIC7785-10 UPDATED 04/12/2006 7.70-8.50 GHz 10-Watt Internally Matched Power FET Excelics EIC7785-10 .827±.010 .669 .120 MIN FEATURES 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 7.70-8.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 39.5 7.5 TYP 40.5 8.5 MAX UNITS dBm dB ±0.6 28 3300 -43 -46 5700 -2.5 2.5 7100 -4.0 3.0 o dB % 3700 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 57 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends...