EIC7785-5

www.DataSheet4U.com EIC7785-5 UPDATED 08/21/2007 7.70-8.50GHz 5-Watt Internally-Matched Power FET FEATURES 7.70–8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -49 dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1600mA f = 7.70-8.50GHz Drain Current at 1dB Compression f = 7.70-8.50GHz Opt-01 Opt-02 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 36.5 7.5 TYP 37.5 8.5 MAX UNITS dBm dB ±0.6 34 1600 -42 -46 -45 -49 2900 -2.5 5.0 3500 -4.0 5.5 o dB % 1900 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 30 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 68mA -13.6mA 37dBm 175C -65C to +175C 27W CONTINUOUS2 10V -4V 20.4mA -3.4mA @ 3dB...