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EIC8596-4
8.50-9.60 GHz 4-Watt Internally-Matched Power FET
Issued Date: 06-07-04
FEATURES
• • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC8596-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 8.50-9.60GHz Drain Current at 1dB Compression f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60 GHz
MIN 35.5 6.5
TYP 36.5 7.5
MAX
UNITS dBm dB
±0.6 30 1100 -40 -43 1800 -2.5 5.0 2200 -4.0 6.0
o
dB %
1300
mA dBc mA V C/W
Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA
Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised July 2004
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EIC8596-4
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 40 mA @ 3dB compression 20 W 150°C -65/+150°C
1,2
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1100mA
S11 and S22
6 0.
Swp Max 10GHz
2. 0
0.8
20
S21 and S12
-1.0
1.0
-0.8
-0 .6
-3
.0
-10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
10.0
.4 -0
-0 .6
-2
S[2,2] * EIC8596-4
-0.8 0.8
0. 4
.0
-1.0
FREQ (GHz)
--- S11 --MAG ANG
8.00 8.25 8.50 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50
0.639 0.589 0.553 0.535 0.516 0.479 0.406 0.292 0.123 0.085 0.278
-131.090 -162.210 167.390 138.050 111.210 86.150 62.550 36.850 5.160 -167.640 157.010
Specificati.