EIC8596-8

www.DataSheet4U.com EIC8596-8 UPDATED 08/21/2007 8.50-9.60GHz 8-Watt Internally-Matched Power FET FEATURES 8.50 –9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 8.50-9.60GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.5 6.5 TYP 39.5 7.5 ±0.6 30 2200 -40 -43 3700 -2.5 2.5 4300 -4.0 3.5 o MAX UNITS dBm dB dB % 2600 mA dBc mA V C/W VDS = 3 V, IDS = 40 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96mA -19.2mA 39.0dBm 175C -65C to +175C 43W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175C -65C...