2SK3988-01

2SK3988-01 www.DataSheet4U.com FUJI POWER MOSFET 200511 Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Ratings 600 600 3.0 ±12.0 ±30 3.0 237.3 6.0 20 5 60 2.02 +150 Unit V V A A V A mJ mJ kV/μ s kV/μ s W W °C °C Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < = 600V Note *4 Tc=25°C Ta=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Operating and storage Tch temperature range Tstg -55 to +150 < Note *1 Tch=150°C Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF < = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch = 150°C Electrical characteristics (Tc =25°C unless otherwise ...