STF3NK80Z
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK...
Description
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
Datasheet - production data
Features
Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
VDS 800 V 800 V 800 V 800 V
RDS(on) max. 4.5 Ω 4.5 Ω 4.5 Ω 4.5 Ω
ID 2.5 A 2.5 A 2.5 A 2.5 A
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
Description
These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products.
Table 1: Device summary
Marking
Package
Packaging
D3NK80Z
IPAK
Tube
D3NK80Z
DPAK
Tape and reel
F3NK80Z
TO-220FP
Tube
P3NK80Z
TO-220
Tube
April 2017
DocID9565 Rev 7
This is information on a product in full production.
1/29
www.st.com
Contents
Contents
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ......
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