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F3NK80Z

STMicroelectronics

STF3NK80Z

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK...


STMicroelectronics

F3NK80Z

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Description
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z VDS 800 V 800 V 800 V 800 V RDS(on) max. 4.5 Ω 4.5 Ω 4.5 Ω 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A  Extremely high dv/dt capability  100% avalanche tested  Gate charge minimized  Zener-protected Figure 1: Internal schematic diagram Applications  Switching applications Order code STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products. Table 1: Device summary Marking Package Packaging D3NK80Z IPAK Tube D3NK80Z DPAK Tape and reel F3NK80Z TO-220FP Tube P3NK80Z TO-220 Tube April 2017 DocID9565 Rev 7 This is information on a product in full production. 1/29 www.st.com Contents Contents STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ......




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