| DatasheetsPDF.com |
24N40E Datasheet, Equivalent, MTW24N40E.MTW24N40E MTW24N40E |
| Part | 24N40E |
|---|---|
| Description | MTW24N40E |
| Feature | MOTOROLA
www. DataSheet4U. com Designer's SEMICONDUCTOR TECHNICAL DATA Order th is document by MTW24N40E/D TMOS E-FET . ™ Power Field Effect Transistor TO-2 47 with Isolated Mounting Hole N–Chan nel Enhancement–Mode Silicon Gate Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without d egrading performance over time. In addi tion, this advanced TMOS E–FET is des igned to withstand high energy in the a valanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast r ecovery time. Designed for h . |
| Manufacture | Motorola |
| Datasheet |
| Part | 24N40E |
|---|---|
| Description | MTW24N40E |
| Feature | MOTOROLA
www. DataSheet4U. com Designer's SEMICONDUCTOR TECHNICAL DATA Order th is document by MTW24N40E/D TMOS E-FET . ™ Power Field Effect Transistor TO-2 47 with Isolated Mounting Hole N–Chan nel Enhancement–Mode Silicon Gate Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without d egrading performance over time. In addi tion, this advanced TMOS E–FET is des igned to withstand high energy in the a valanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast r ecovery time. Designed for h . |
| Manufacture | Motorola |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |