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2SK4115 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | 2SK4115 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK4115
www. DataSheet4U. com TOSHIBA Fie ld Effect Transistor Silicon N-Channel MOS Type (Ï€- MOSâ…£) 2SK4115 Switchin g Regulator Applications • • • †¢ Low drain-source ON resistance: RDS ( ON) = 1. 6 Ω (typ. ) High forward transf er admittance: ⎪Yfs⎪ = 5. 0 S (typ. ) Low leakage current: IDSS = 100 μA (m ax) (VDS = 720 V) 3. 3max. 2. 0 9. 0 20. 0 ±0. 3 2. 0 Ф3. 2±0. 2 1. 0 4. 5 Unit: mm 15. 9max. Enhancement model: Vth = 2. 0~ 4. 0 V (VDS = 10 V, ID = 1 mA) Characte ristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volt age Drain current DC Pulse (Note 1) (No te 1) Symbol VDSS VDGR VGSS ID IDP . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 2SK4115 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK4115
www. DataSheet4U. com TOSHIBA Fie ld Effect Transistor Silicon N-Channel MOS Type (Ï€- MOSâ…£) 2SK4115 Switchin g Regulator Applications • • • †¢ Low drain-source ON resistance: RDS ( ON) = 1. 6 Ω (typ. ) High forward transf er admittance: ⎪Yfs⎪ = 5. 0 S (typ. ) Low leakage current: IDSS = 100 μA (m ax) (VDS = 720 V) 3. 3max. 2. 0 9. 0 20. 0 ±0. 3 2. 0 Ф3. 2±0. 2 1. 0 4. 5 Unit: mm 15. 9max. Enhancement model: Vth = 2. 0~ 4. 0 V (VDS = 10 V, ID = 1 mA) Characte ristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volt age Drain current DC Pulse (Note 1) (No te 1) Symbol VDSS VDGR VGSS ID IDP . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
　
　
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