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PSMN013-80YS Dataheets PDF



Part Number PSMN013-80YS
Manufacturers NXP
Logo NXP
Description N-Channel MOSFET
Datasheet PSMN013-80YS DatasheetPSMN013-80YS Datasheet (PDF)

PSMN013-80YS www.DataSheet4U.com N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „.

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PSMN013-80YS www.DataSheet4U.com N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max 80 60 106 175 70 Unit V A W °C mJ drain-source voltage drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; avalanche energy RGS = 50 Ω; unclamped Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 8 37 nC nC Static characteristics RDSon drain-source on-state resistance 9.7 19.8 12.9 mΩ mΩ NXP Semiconductors w w w . D a t a S h e e t 4 U . c o m PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name PSMN013-80YS LFPAK Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Type number 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ Min -20 -55 -55 Max 80 80 20 42 60 233 106 175 175 260 Unit V V V A A A W °C °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode IS ISM EDS(AL)S 60 233 70 A A mJ Avalanche ruggedness non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; drain-source avalanche RGS = 50 Ω; unclamped energy PSMN013-80YS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 25 June 2009 2 of 13 NXP Semiconductors www.DataSheet4U.com PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 60 ID (A) 003aad230 120 Pder (%) 80 03aa16 40 20 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aad314 103 ID (A) 102 100μ s 10 Limit RDSon = VDS / ID 10μ s 1 DC 1ms 10ms 100ms 10-1 1 10 10 2 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN013-80YS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 25 June 2009 3 of 13 NXP Semiconductors www.DataSheet4U.com PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.54 Max 1.4 Unit K/W thermal resistance from see Figure 4 junction to mounting base 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single shot tp P 003aac657 δ= tp T t T 10 -3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN013-80YS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 25 June 2009 4 of 13 NXP Semiconductors www.DataSheet4U.com PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure .


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