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PSMN013-80YS
www.DataSheet4U.com
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max 80 60 106 175 70 Unit V A W °C mJ drain-source voltage drain current total power dissipation junction temperature Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; avalanche energy RGS = 50 Ω; unclamped Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 8 37 nC nC
Static characteristics RDSon drain-source on-state resistance 9.7 19.8 12.9 mΩ mΩ
NXP Semiconductors
w w w . D a t a S h e e t 4 U . c o m
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name PSMN013-80YS LFPAK Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ Min -20 -55 -55 Max 80 80 20 42 60 233 106 175 175 260 Unit V V V A A A W °C °C °C
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode IS ISM EDS(AL)S 60 233 70 A A mJ
Avalanche ruggedness non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; drain-source avalanche RGS = 50 Ω; unclamped energy
PSMN013-80YS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2009
2 of 13
NXP Semiconductors
www.DataSheet4U.com
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
60 ID (A)
003aad230
120 Pder (%) 80
03aa16
40
20
40
0 0 50 100 150 Tmb (°C) 200
0 0 50 100 150 Tmb (°C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aad314
103 ID (A) 102 100μ s 10 Limit RDSon = VDS / ID 10μ s
1 DC
1ms 10ms 100ms
10-1 1 10 10
2
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN013-80YS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2009
3 of 13
NXP Semiconductors
www.DataSheet4U.com
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.54 Max 1.4 Unit K/W thermal resistance from see Figure 4 junction to mounting base
10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single shot
tp P
003aac657
δ=
tp T
t T
10
-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN013-80YS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2009
4 of 13
NXP Semiconductors
www.DataSheet4U.com
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure .