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PSMN002-25P; PSMN002-25B
N-channel enhancement mode field-effect transistor
Rev. 01 — 22 October 200...
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PSMN002-25P; PSMN002-25B
N-channel enhancement mode field-effect
transistor
Rev. 01 — 22 October 2001 Product data
1. Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN002-25P in SOT78 (TO-220AB) PSMN002-25B in SOT404 (D2-PAK)
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters s OR-ing applications.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d)
g s
Simplified outline
[1]
mb mb
Symbol
d
MBB076
2 1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
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PSMN002-25 series
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ − − − − 2.2 2.45 Max 25 75 230 175 2.6 2.9 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with ...