PSMN004-36P

www.DataSheet4U.com PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features s Very low on-state resistance s Fast switching. 3. Applications s DC to DC converters s Switch mode power supplies. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d) g s Simplified outline [1] mb mb Symbol d MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors www.DataSheet4U.com PSMN004-36P/36B N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25°C VGS = 5 V; ID = 25 A; Tj = 25°C Typ − − − − 3.5 4 Max 36 75 230 175 4 5 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60...