PSMN006-20K

www.DataSheet4U.com PSMN006-20K TrenchMOS™ ultra low level FET Rev. 01 — 30 May 2002 Product data 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN006-20K in SOT96-1 (SO8). 2. Features s Very low on-state resistance s Very low threshold s TrenchMOS™ technology. 3. Applications s DC to DC converter s Computer motherboards s Switch mode power supplies. 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) Philips Semiconductors www.DataSheet4U.com PSMN006-20K TrenchMOS™ ultra low level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 5 A; Tj = 25 °C VGS = 2.5 V; ID = 5 A; Tj = 25 °C VGS = 1.8 V; ID = 5 A; Tj = 25 °C Typ 4.2 4.8 5.7 Max 20 32 8.3 150 5 5.7 8.2 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS ID VGS IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain current (DC) gate-source voltage peak drain ...