TQRLC

Production Released Process www.DataSheet4U.com Advanced PassivesFoundry Foundry Service Service GaAs MESFET Features TQRLC TQTRx Thick 4 Layer Metal; > 9 µm total thickness High Density Interconnects: 3 Global 1 Local High-Q Passives; Inductor Q >50 @ 2 GHz Low Cost: Passives Only Thin Film Resistors Dielectric Encapsulated Metals Planarized Surface; simplified plastic packaging Volume Production Process TQRLC TQTRx Process Cross-Section Applications General Description TriQuint’s TQRLC is a pure passives process. It is targeted at high performance, small size passive-only circuits and utilizes over 9 µm of gold metal. High density interconnections are accomplished with three thick global and one surface metal interconnect layers. The four metal layers are encapsulated in a high performance, low dielectric constant material that allows wiring flexibility and plastic packaging simplicity. Precision NiCr resistors, inductors, and high value MIM capacitors are available. The process is based on the TQTRx process, currently TriQuint’s highest volume process. The TQRLC process is available on 150-mm (6 inch) wafers. Passive Components: Phase Shifters Baluns Transformers Couplers Mixers (with off-chip diode arrays) Circuits Requiring High-Q Passive Elements Matching Circuits RF Module Front-End Filters General RF and Microwave Impedance Matching TriQuint Semiconductor TriQuint Semiconductor 2300 NE Brookwood Pkwy 2300 NE Brookwood ...