-20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET
FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
www.DataSheet4U.com
June 2009
FDZ197PZ
P-Channel 1...
Description
FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
www.DataSheet4U.com
June 2009
FDZ197PZ
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -3.8 A, 64 mΩ
Features
Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB HBM ESD protection level > 4400V (Note3) RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Applications
Battery management Load switch Battery protection
PIN1 S S D D S G
TOP WL-CSP 1x1.5 Thin
BOTTOM
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.8 -15 1.9 0.9 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Ra...
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