NTLUS3192PZ

NTLUS3192PZ Advance Information Power MOSFET −20 V, −4.2 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected This is a Halide Free Device This is a Pb−Free Device Applications High Side Load Switch PA Switch and Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.0 −3.4 −2.4 −4.2 1.5 Units V V A W t ≤ 5 s TA = 25°C 2.3 Continuous Drain Steady TA = 25°C ID Current (Note 2) State TA = 85°C −2.2 A −1.6 Power Dissipation (Note 2) TA = 25°C PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, -55 to °C TSTG 150 Source Current (Body Diode) (Note 2) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Gate-to-Source ESD Rating (HBM) per JESD22−A114F ESD 1000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommende...