STH200N55F3-2

www.DataSheet4U.com STH200N55F3-2 N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET Preliminary data Features Type STH200N55F3-2 VDSS 55 V RDS(on) max < 2.6 mΩ ID (1) 160 A 2 1. Current limited by package ■ ■ Ultra low on-resistance 100% avalanche tested 3 1 3 Application ■ H²PAK Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking 200N55F3 Package H²PAK Packaging Tape and reel STH200N55F3-2 July 2009 Doc ID 16085 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STH200N55F3-2 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 16085 Rev 1 www.DataSheet4U.com STH200N55F3-...