STS5N15F4

www.DataSheet4U.com STS5N15F4 N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET™ DeepGATE™ Power MOSFET Features Type STS5N15F4 ■ ■ ■ ■ VDSS 150 V RDS(on) max < 0.063 Ω ID 5A N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. Table 1. Device summary Marking 5U15Package SO-8 Packaging Tape and reel Order code STS5N15F4 July 2009 Doc ID 16083 Rev 1 1/11 www.st.com 11 www.DataSheet4U.com Electrical ratings STS5N15F4 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM(1) PTOT Tstg Tj Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Storage temperature -55 to 150 Operating junction temperature °C Value 150 ± 20 5 3 20 2.5 Unit V V A A A W 1. Pulse width limited by safe operating area Table 3. Symbol Rthj-pcb (1) Thermal data Parameter Thermal resistance junction-pcb max Value 50 Unit °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or n...