2SC4003

www.DataSheet4U.com SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp PC Rating 400 400 5 200 400 1 10 150 -55 to +150 Unit V V V mA mA W W 3 .8 0 Adoption of MBIT process www.kexin.com.cn 1 www.DataSheet4U.com SMD Type 2SC4003 Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current DC current Gain Gain-Bandwidth Product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO cob cre ton toff Testconditons VCB=300V,IE=0 VEB=4V,IC=0 VCE=10V,IC=50mA VCE=30V,IC=10mA IC=50mA,IB=5mA IC=50mA,IB=5mA IC=10ìA,IE=0 IC=1mA,RBE= IE=10ìA,IC=0 VCB=30V,f=1MHz VCB=30V,f=1MHz see specified Test Circuit 400 400 5 60 Min ...