Schottky Rectifier. DSSK20-0045B Datasheet

DSSK20-0045B Rectifier. Datasheet pdf. Equivalent

Part DSSK20-0045B
Description Power Schottky Rectifier
Feature DSSK 20-0045B www.DataSheet4U.com Power Schottky Rectifier with common cathode IFAV = 2x10 A VRRM .
Manufacture IXYS Corporation
Datasheet
Download DSSK20-0045B Datasheet




DSSK20-0045B
www.DataSheet4U.com
Power Schottky Rectifier
with common cathode
VRSM
V
45
VRRM
V
45
Type
DSSK 20-0045B
DSSK 20-0045B
IFAV = 2x10 A
VRRM = 45 V
VF = 0.45 V
AC A
TO-220 AB
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
IFRMS
IFAV
IFAV
IFSM
EAS
IAR
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
Md
Weight
Symbol
IR 
VF
RthJC
RthCH
Conditions
Maximum Ratings
TC = 135°C; rectangular, d = 0.5
TC = 135°C; rectangular, d = 0.5; per device
TVJ = 45°C; tp = 10 ms (50 Hz), sine
IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
35
10
20
160
24
1.3
1000
A
A
A
A
mJ
A
V/ms
-55...+150
150
-55...+150
°C
°C
°C
TC = 25°C
mounting torque
75
0.4...0.6
W
Nm
typical
2g
Conditions
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
IF = 10 A;
IF = 10 A;
IF = 20 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125 °C
Characteristic Values
typ. max.
5 mA
50 mA
0.45 V
0.51 V
0.70 V
1.7 K/W
0.5 K/W
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2000 IXYS All rights reserved
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DSSK20-0045B
www.DataSheet4U.com
DSSK 20-0045B
100
A
IF
10
TVJ =
150°C
125°C
25°C
1
0.0 0.2 0.4 0.6 0.8 V 1.0
VF
Fig. 1 Maximum forward voltage
drop characteristics
40
A
30
IF(AV)
20
d=0.5
DC
10
0
0 40 80 120 °C 160
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
1000
mA
TVJ=150°C
100
IR
125°C
10
100°C
1 75°C
50°C
0.1
25°C
0.01
0
10 20 30 40 V 50
VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
40
W
30
P(AV)
20
10
0
0 10 20
IF(AV)
Fig. 5 Forward power loss
characteristics
d=
DC
0.5
0.33
0.25
0.17
0.08
30 A
1000
pF
CT
TVJ= 25°C
100
0 10 20 30 40 V
VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
A
IFSM
µs
tP
1 D=0.5
K/W 0.33
0.25
ZthJC
0.17
0.08
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
DSSK 20-0045B
1s
t
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2000 IXYS All rights reserved
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